PART |
Description |
Maker |
2SK2885 2SK2882 |
SILICON N-CHANNEL MOS TYPE N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
NNCD6.2MF NNCD6.2MF-T1 NNCD6.2MF-T2 |
ESD noise clipping diode 3pin SC-59 Low capacitance,Hi ESD type LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DUAL TYPE: COMMON ANODE 3-PIN MINI MOLD 低电容高ESD静电放电噪音型裁剪二极管双类型:通用阳极3针微型模
|
NEC Corp.
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开 N-channel enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) From old datasheet system Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor Hitachi Semiconductor
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
UPA1870B UPA1870BGR-9JG UPA1870BGR-9JG-E1 UPA1870B |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC] NEC Corp.
|
NNCD68RG NNCD6.8RG NNCD6.8RG-T2 NNCD6.8RG-T1 |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD ESD noise clipping diode 5pin SC-74A low capacitance
|
NEC Corp. NEC[NEC]
|
2SK18407 2SK184 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SK184 E001400 |
From old datasheet system N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|